发明名称 |
Programmable logic circuit |
摘要 |
A logic circuit is provided which can hold a switching state of the logic circuit even when a power supply potential is not supplied, has short start-up time of a logic block after the power is supplied, can operate with low power consumption, and can easily switch between a NAND circuit and a NOR circuit. Switching between a NAND circuit and a NOR circuit is achieved by switching a charge holding state at a node through a transistor including an oxide semiconductor. With the use of an oxide semiconductor material which is a wide bandgap semiconductor for the transistor, the off-state current of the transistor can be sufficiently reduced; thus, the state of charge held at the node can be non-volatile. |
申请公布号 |
US9397664(B2) |
申请公布日期 |
2016.07.19 |
申请号 |
US201414282288 |
申请日期 |
2014.05.20 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Takewaki Yoshiya |
分类号 |
H03K19/0175;H03K19/0948;H03K19/177 |
主分类号 |
H03K19/0175 |
代理机构 |
Robinson Intellectual Property Law Office |
代理人 |
Robinson Intellectual Property Law Office ;Robinson Eric J. |
主权项 |
1. A semiconductor device comprising:
a first transistor including an oxide semiconductor film; a first circuit including an n-channel transistor and a second transistor, the first circuit having a first function; a second circuit including a p-channel transistor and the second transistor, the second circuit having a second function; a first signal line configured to input a first signal to the first circuit and the second circuit; and a second signal line configured to input a second signal to the first circuit and the second circuit; an output line electrically connected to one of a source and a drain of the n-channel transistor and one of a source and a drain of the p-channel transistor, wherein one of a source and a drain of the first transistor is electrically connected to a gate of the n-channel transistor and a gate of the p-channel transistor. |
地址 |
Kanagawa-ken JP |