发明名称 APPARATUS FOR FORMING OXIDE FILM, HEAT TREATMENT APPARATUS, SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREFOR
摘要 <p>A heat treatment apparatus which can perform active gas sintering, etc. for forming a reliable oxide film on the surface of a substrate in a furnace tube. In the apparatus, provided are at least a furnace tube (1) which has a closable opening part (11) for loading in and out an object (5) to be treated and has gas introducing inlets (12) for introducing gases inside, a heating means (4) for heating the inside of the furnace tube (1), gas introducing pipes (2) communicating with the gas introducing inlets (12) so as to pass gases through them, and a heating means (9) for heating the gas introducing pipes (2). At least the inner surfaces of the gas introducing pipes (2) are made of nickel or a material containing nickel.</p>
申请公布号 WO1993010556(P1) 申请公布日期 1993.05.27
申请号 JP1992001534 申请日期 1992.11.24
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