| 摘要 |
<p>The present invention relates to a MOS transistor formed in a first p-type region (5) with low doping level covering a second p-type region (6) with higher doping level comprising a drain region (3) of the second type of conductivity, an n-type source region (4) and a region (7) for making contact with the first region, the drain, source and contact-remake regions being formed at the surface of the first region, the source region and the contact-remake region being connected. A third n-type region (9) with high doping level extends from a surface portion of the first region in contact with the drain region up to the second region. <IMAGE></p> |
