A method of forming high-stability metallic contacts in an integrated circuit with one or more metallized layers.

摘要

A method of forming high-stability metallic contacts in an integrated circuit with one or more metallized layers provides for a preliminary step of providing a plurality of contact holes (7) in a layer (5) of dielectric material and comprises the steps of: a) forming a first layer (9) of tungsten on the layer (5) of dielectric material by chemical vapour deposition so as to coat the bases and the walls of the contact holes (7) uniformly, b) forming a second layer (11) of aluminium or an alloy thereof by sputtering deposition on top of the first layer (9) of tungsten so as to fill the holes (7), and c) forming a plurality of metallic interconnections (13) of predetermined geometry by the selective removal of predetermined areas of the superposed aluminium and tungsten layers (9, 11). <IMAGE>