发明名称 |
Semiconductor device |
摘要 |
A semiconductor device comprises: a insulating film having a first part and a second part, the second part being thiner than the first part; and a polycrystalline silicon film having a first part arranged over the first part of the insulating film and a second part arranged over the second part of the insulating film, the second part of the polycrystalline silicon film having a lower concentration of impurities than that of the first part of the polycrystalline silicon film.
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申请公布号 |
US5214304(A) |
申请公布日期 |
1993.05.25 |
申请号 |
US19920849834 |
申请日期 |
1992.03.12 |
申请人 |
FUJITSU LIMITED |
发明人 |
EMA, TAIJI;SHIRAI, KAZUNARI |
分类号 |
H01L21/768;H01L21/8242;H01L23/532;H01L27/108;H01L29/423;H01L29/43;H01L29/49;H01L29/92 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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