发明名称 Semiconductor device
摘要 A semiconductor device comprises: a insulating film having a first part and a second part, the second part being thiner than the first part; and a polycrystalline silicon film having a first part arranged over the first part of the insulating film and a second part arranged over the second part of the insulating film, the second part of the polycrystalline silicon film having a lower concentration of impurities than that of the first part of the polycrystalline silicon film.
申请公布号 US5214304(A) 申请公布日期 1993.05.25
申请号 US19920849834 申请日期 1992.03.12
申请人 FUJITSU LIMITED 发明人 EMA, TAIJI;SHIRAI, KAZUNARI
分类号 H01L21/768;H01L21/8242;H01L23/532;H01L27/108;H01L29/423;H01L29/43;H01L29/49;H01L29/92 主分类号 H01L21/768
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