摘要 |
PURPOSE:To restrain the variation in the high-frequency characteristics by a method wherein the inner sidewalls of an L-type heat sink are brought into contact with the surface and the side of a semiconductor laser mounted substrate, and the side is bonded to the heat sink to be fixed so that the bottom surface of the substrate and the heat sink may be almost flush with each other. CONSTITUTION:The inner sidewall surface of an L-type heat sink 3 is brought into contact with the non-metallized region on the surface of a substrate 2 while the wall surface perpendicular to said region is fixed to the metallized side of the substrate 2 by bonding agent 15 or resistance welding etc. The length of the heat sink 3 is specified so that the bottom surfaces of the heat sink 3 and the semiconductor laser mounted substrate 2 may be almost flush with each other. Next, the lower surface electrode of the semiconductor laser 1 is brought into contact with metallized part on the surface of the substrate 2 to be aligned with each other and then fixed using a solder 12 next, the upper surface electrode of the semiconductor laser 1 is wired to the connecting surface 9 of the heat sink 3 using a wire 4. Accordingly, the dispersion in the level discrepancy I between the surface of the semiconductor laser 1 and the connecting surface 9 of the heat sink 3 can be restrained. |