| 摘要 |
PURPOSE:To enhance resistance against soft error or latch-up by embedding insulation film parts containing oxygen or nitrogen atoms deeply in a semiconductor layer in positions corresponding to each high concentration semiconductor active region. CONSTITUTION:Insulation film parts 29, 30 are embedded deeply in a P-type semiconductor substrate 21 at positions corresponding, respectively, to high concentration N-type active regions 23, 24. Since minority carriers can not pass through the embedded insulation film parts 29, 30, soft error can be blocked effectively at these parts. Furthermore, since high concentration N-type active regions 40, 41 and 42, 43 block current flow between the source and the substrate region of CMOS, latch-up resistance can effectively be enhanced. |
