发明名称 |
Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer |
摘要 |
An ultraviolet laser diode having multiple portions in the n-cladding layer is described herein. The laser diode comprises a p-cladding layer, an n-cladding layer, a waveguide, and a light-emitting region. The n-cladding layer includes at least a first portion and a second portion. The first portion maintains material quality of the laser diode, while the second portion pulls the optical mode from the p-cladding layer toward the active region. The first portion may have a higher aluminum composition than the second portion. The waveguide is coupled to the n-cladding layer and the light-emitting region is coupled to the waveguide. The light-emitting region is located between the n-cladding layer and the p-cladding layer. Other embodiments are also described. |
申请公布号 |
US9444224(B2) |
申请公布日期 |
2016.09.13 |
申请号 |
US201414563847 |
申请日期 |
2014.12.08 |
申请人 |
PALO ALTO RESEARCH CENTER INCORPORATED |
发明人 |
Chua Christopher L.;Wunderer Thomas;Yang Zhihong |
分类号 |
H01S5/30;H01S5/32;H01S5/323;H01S5/343;H01S5/20 |
主分类号 |
H01S5/30 |
代理机构 |
Blakely Sokoloff Taylor & Zafman LLP |
代理人 |
Blakely Sokoloff Taylor & Zafman LLP |
主权项 |
1. A laser diode comprising:
a p-cladding layer; an n-cladding layer, the n-cladding layer comprising an engineered non-uniform alloy composition including a bottom portion and an upper portion,
wherein the bottom portion maintains material quality, wherein the bottom portion is substantially lattice matched to the substrate, andthe upper portion pulls a mode from the p-cladding layer, wherein the bottom portion and the upper portion are compressively strained layers; a waveguide coupled to the upper portion of the n-cladding layer; and a light-emitting region coupled to the waveguide, wherein the light-emitting region is located between the n-cladding layer and the p-cladding layer. |
地址 |
Palo Alto CA US |