| 摘要 |
Disclosed herein is a thin-film transistor manufactured by a method which comprises the steps of forming a gate electrode (12) on an insulating substrate (11), a gate insulating film (13) covering the gate electrode, and an i-type a-Si layer (14) on the gate insulating film, forming a blocking film (17) made of metal such as Cr or the like on a channel-forming region of the i-type a-Si layer, and forming an n-type a-Si layer (15) covering the i-type a-Si layer and the blocking film, forming a metal layer on the n-type a-Si layer, and etching a predetermined portion of the n-type a-Si layer and a predetermined portion of the metal layer, thereby forming a source electrode (16a) and a drain electrode (16b). That portion of the blocking film which is located below a gap between the source electrode and the drain electrode is removed from the i-type a-Si layer. <IMAGE> |
