发明名称 |
BiCMOS device having an SOI substrate and process for making the same |
摘要 |
A BiCMOS device and process are disclosed wherein the transistors components are fabricated on an SOI substrate. A SIMOX process is used to form a buried oxide layer in a single crystal silicon substrate followed by an epitaxial deposition to form a silicon body of varying thickness overlying the buried oxide layer. MOS transistors are then formed in a thin portion of the epitaxial layer and a vertical bipolar transistor is formed in the thick portion of the epitaxial layer. In accordance with one embodiment of the invention, a single crystal semiconductor substrate is provided having a principal surface and a buried oxide layer underlying the first surface. A lightly doped epitaxial layer of a first conductivity type having a thin MOS region and a thick bipolar region overlies the principal surface. A first and second isolation regions extending from the first surface to the buried oxide layer separate and electrically insulate the bipolar region from the MOS region. An NMOS and a PMOS transistor are formed in the thin MOS region and are separated by a third isolation region extending from the first surface to the buried oxide layer. A vertical bipolar is formed in the electrically insulated bipolar region of the epitaxial layer.
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申请公布号 |
US5212397(A) |
申请公布日期 |
1993.05.18 |
申请号 |
US19900566901 |
申请日期 |
1990.08.13 |
申请人 |
MOTOROLA, INC. |
发明人 |
SEE, YEE-CHAUNG;MELE, THOMAS C.;ALVIS, JOHN R. |
分类号 |
H01L27/06;H01L27/12 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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