MASK FOR LITHOGRAPHY AND ITS PRODUCTION

摘要

PURPOSE:To provide a mask for lithography having excellent dimensional accuracy and resolution and to provide a method by which this mask can be produced extremely easily. CONSTITUTION:A SnO2 thin film 2 of 0.2mum thickness is formed on a transparent quartz glass plate 1. The SnO2 thin film 2 is selectively irradiated with an electron beam 3 under conditions of 20muC/cm<2> and 0.5mum address unit (beam diameter). During radiation, the reduction reaction (SnO2 Sn+O2) proceeds to change the area irradiated with the electron beam 3 into reduced product (Sn) 4 having shielding property. Thus, the mask for lithography is obtd.