AUXILIARY GATE LIGHTLY DOPED DRAIN (AGLDD) STRUCTURE WITH DIELECTRIC SIDEWALLS

摘要

In a method for producing an auxiliary gate lightly doped drain structure, a gate region (26) is placed on a substrate between two source/drain regions (21, 22). A first implant of atoms is made into the substrate on two sides of the gate region. Sidewalls (39, 49) are formed on the two sides of the gate region. Auxiliary gate regions (37, 47) are formed over the sidewalls. The auxiliary gate regions are separated from the gate region by the sidewalls. Dielectric regions (38, 48) are formed over the auxiliary gate regions. A second implant of atoms is performed into the substrate on two sides of the dielectric regions. The sidewalls and the auxiliary gate regions are composed of resistive material.