| 摘要 |
A semiconductor substrate comprising: a single-crystalline semiconductor wafer substrate; a strained layer superlattice (SLS) structure layer formed on the wafer substrate; and a compound semiconductor epitaxial layer formed on the SLS structure layer. According to the present invention, the SLS structure layer consists of pairs of a first compound semiconductor thin layer and a second compound semiconductor thin layer, the first and second thin layers having the same components in a compound system having a miscibility gap, and having different compositions outside of the miscibility gap including the limit line of the miscibility gap, respectively, at a temperature higher than that of heat-treatments applied to the compound semiconductor substrate, without a decay of the SLS structure. |
