Semiconductor memory device.

摘要

A semiconductor memory device includes respective regions of a column decoder (14) and a sense amplifier drive circuit (15) arranged to lie opposite to each other on a semiconductor chip (10), respective regions of a memory cell array (11), a column gate (17) and a sense amplifier (16) arranged between the regions of the column decoder and the sense amplifier drive circuit, a plurality of column selection lines (20a<2>20h) led out from the region of the column decoder, connected to respective column gate portions of the region of the column gate, and collected and arranged with units of groups (22, 23) of a predetermined number above the region of the column gate so as to have a smaller arrangement pitch (d1) than that (d2) of the column gate portion, and at least one sense amplifier drive signal line (21) led out from the region of the sense amplifier drive circuit, connected to respective sense amplifier portions of the region of the sense amplifier, and arranged above the region of the sense amplifier so as to lie next to each group of the column selection lines. By the constitution, it is possible to constitute the memory device without any problem or difficulty from a viewpoint of the layout thereof even if it is a large capacity memory such as a 16 M-bit DRAM.