Isolation region in a group III-V semiconductor device and method of making the same.

摘要

A semiconductor device having in a body of a group III-V semiconductor material at least one isolation region which is stable at temperatures up to about 900<o>C. The isolation region is formed of ions of a group III or V element which are implanted into the body and then thermally annealed at a temperature of between 650<o>C and 900<o>C. This provides the regions with voids which remove free carriers and makes the region highly resistive. <IMAGE>