INSULATED GATE GTO THYRISTOR

摘要

According to this invention, there is disclosed an insulated gate GTO thyristor comprising a pnpn structure including a p-type emitter layer, an n-type base layer, a p-type base layer, and an n-type emitter layer. The thyristor has a first gate electrode contacting the p-type base layer and a second gate electrode formed on a channel region of the p-type base layer through a gate insulating film. An n+-type layer of the n-type emitter layer immediately below a cathode electrode and an n--type layer of the n-type emitter layer contacting the channel region are formed in different manufacturing steps, and an emitter breakdown voltage and the threshold voltage of the second gate electrode are optimally set.