| 摘要 |
<p>PURPOSE:To decrease the fluctuations in the thicknesses of phase shifter layer patterns so that a phase shift effect can be utilized to the max. possible extent and overlap photolithographing is well executed by forming conductive layers and an etching stopper layer. CONSTITUTION:The etching stopper layer 2 at the time of forming the phase shifter layer patterns for applying a phase difference is provided and the conductive layer 6 for preventing the charge-up at the time of electron beam lithographing is provided in the case of production of the phase shift mask for applying the phase difference to the illuminating light transmitted through apertures. The etching stopper layer 2 is provided to stop the etching of the phase shifter layers 3 so as not to etch a substrate 1 and is required to have high transparency and to enable taking of a sufficient selection ratio with SiO2 at the time of etching of the phase shifter layers 3. The conductive layers 6 are merely required to have the electrical conductivity for preventing charge-up at the time of the overlap plotting by electron beams. A metallic thin film, org. conductive material, etc., are usable for this layer.</p> |
