ALGAINP DIODES EMITTING VISIBLE LIGHT

摘要

The invention concerns AlGalnP/GalnP visible laser diodes and LEDs withimproved maximum output power. This is achieved by embedding the active region of the diode (30), e.g. a GalnP active layer (35), between very thin pand n-doped AlGalnP barrier layers (34.1, 34.2) and thick p- and n-doped AlGaAs cladding layers (33, 36). The inventive barrier layers (34.1, 34.2) are employedto avoid tunneling and spill over of carriers from the active region (35) into the cladding (33, 36). These barrier layers (34.1, 34.2) can be very thin thus allowing bandgap engineering and providing for barriers with low defect density. In addition the low resistance of the AlGaAs cladding reduces the thermal and electrical resistances of the device.