发明名称 PHOTOMASK, EXPOSING METHOD, AND PROJECTION EXPOSURE DEVICE
摘要 PURPOSE:To obtain excellent image formation performance over the entire exposure area. CONSTITUTION:Transparent films 1a and 1b which differ in refractive index corresponding to the step structure of a wafer 4 and/or the distortion of an image formation plane by a projection lens 3 are adhered to the pattern formed surface of the photomask 1, and the image formation plane is moved in the direction of the optical axis. At this time, the both sides of the projection lens 3 are preferably telecentric. The transparent films 1a and 1b may be separated from the photomask 1 and an image plane correction member which has a refractive index distribution corresponding to the step structure of the wafer 4 and/or the distortion of the image formation plane may be arranged between the photomask 1 and projection lens 3.
申请公布号 JPH05107739(A) 申请公布日期 1993.04.30
申请号 JP19910292063 申请日期 1991.10.14
申请人 NIKON CORP 发明人 KOMATSU MASAYA
分类号 G03F1/38;G03F1/70;G03F7/20;H01L21/027;H01L21/30 主分类号 G03F1/38
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