| 摘要 |
Single-crystal silicon carbide can be obtained by being applied to a single-crystal substrate (e.g. silicon) provided with a buffer layer. It is known to generate the buffer layer by carbonising the surface of silicon. In order to obtain a single-crystal silicon carbide layer with as large an area as possible and as free of defects as possible and which can be fitted with integrated components, the buffer layer must ensure a match between the crystal lattice of the silicon carbide and that of the single-crystal substrate. Suitable buffer layers, for example on a silicon wafer, include, in particular, tantalum carbide, titanium carbide, titanium nitride or manganese oxide. On the surface of the single-crystal silicon carbide layer, electronic components can be integrated, especially for power electronics. |
