| 摘要 |
<p>PURPOSE:To reduce a crosstalk of LED display by a method wherein a light absorbing layer's phosphor mixed crystal ratio of a wafer, having a GaAsP light absorbing layer and a GaAsP actuating layer epitaxially grown on a GaP single crystal, is made smaller than that of an actuating layer. CONSTITUTION:On an N-type GaP single crystal substrate 1 with doped S, Si, Te, etc., a GaP epitaxial layer 2, the first graded layer 3, a light absorbing layer 4, the second graded layer 5 and an actuating layer 6 are epitaxially grown successively. And, with a phosphor mixed crystal ratio established at 0.55, for example, the light absorbing layer 4 is set at GaAs0.45P0.55, the above ratio for the actuating layer 6 is set so that a desired luminescent wave length is obtainable, making it larger than that of the light absorbing layer. the mixed crystal ratio for each graded layer is continuously changed. As a result, when display elements for diagrams, letters, etc. are formed by arranging a number of LED, occurrence of a crosstalk due to indistinctive or faded outlines can be prevented.</p> |
