发明名称 |
Method of infiltration forming a silicon carbide body with improved surface finish |
摘要 |
A method of infiltration forming silicon carbide bodies having an improved surface finish comprises, infiltrating a porous carbonaceous preform with molten infiltrant to form a silicon carbide body. The body is heated in an inert atmosphere or vacuum to a temperature where the infiltrant is molten while the body is positioned in contact with an infiltrant wicking means. Preferably, the wicking means has infiltrant wicking capillaries at least as large as the infiltrant wicking capillaries in the body. Capillary force draws excess infiltrant on the surface of the body from the surface leaving the reaction formed silicon carbide body with a surface substantially free of excess infiltrant droplets.
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申请公布号 |
US5205970(A) |
申请公布日期 |
1993.04.27 |
申请号 |
US19920863604 |
申请日期 |
1992.04.03 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
BRUN, MILIVOJ K.;MORRISON, WILLIAM A. |
分类号 |
C04B35/573 |
主分类号 |
C04B35/573 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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