| 摘要 |
PURPOSE:To realize quick delivery and to eliminate the possibility of deterioration of quality of a gate oxide film by forming a low concentration impurity region for write of information after forming a gate electrode on a gate insulator. CONSTITUTION:A silicon oxide film 4 as a gate insulating film is formed on a semiconductor substrate 2 and a gate electrode 10 is formed by a specified pattern on the oxide film 4. A resist film 30 is formed by a specified pattern to mask a periphery of the specified gate electrode 10 to write information on decision of user's specification of an MROM to be manufactured. Ion implantation for forming a low concentration impurity region 32a is performed. A side wall 14 which consists of an insulator is formed in each gate electrode 10 and high concentration impurity regions 34a, 34b are formed in a part which becomes source and drain regions. Since an information write process is provided in this way after the gate electrode 10 is formed on the oxide film 4, a process after the information write process is greatly reduced and delivery time is remarkably shortened. |
