| 摘要 |
PURPOSE:To provide a low ohmic resistance of high-output face emitting semiconductor light emitting element the manufacture process of which is easy and which has a light emitting part with a small diameter. CONSTITUTION:A pn current checking layer is made by stacking a p-AlGaAs upper clad layer 4, an n-AlGaAs block layer 5, and a p-AlGaAs cap layer 6 in order on an active layer 3, and a Zn diffusion layer (nonreflective coating) 7A having a thickness of lambda/(4n) is made in one part of the topside, and a current implantation area (Zn diffusion area) 10, which reaches the upper clad layer 4, is made below this diffusion source 7A, and lastly, electrodes 8 and 9 are made, respectively, wholly at the top and the bottom excluding the diffusion source 7A. |
