| 摘要 |
PURPOSE: To reduce the manufacturing stages of a device by manufacturing at least one semiconductor quantum that is followed by the mutual diffusion of the barrier of a quantum well. CONSTITUTION: An n-type layer 2 of GaInP, a lamination layer 3 of GaAs/GaInP superlattice, and a layer 4 of GaInP, and a layer 5 of GaAs are manufactured on a substrate 1 by epitaxy. A deposition 6 of silica is formed on the upper surface of a layer that has been grown epitaxially. Then, a window 7 is opened optically or by electronic masking. Then, zinc is diffused by the window 7 via silica mask, thus prescribing the active zone of a constituent to be obtained. The diffusion of zinc forms the mutual diffusion of group III elements in an interface between GaInP barrier and GaAs quantum well, thus the manufacturing stages of a device can be reduced.
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