| 摘要 |
<p>PURPOSE:To simply perform high-accuracy dicing operation by a method wherein the cutting edge of a substrate is etched in advance by a desired am ount from the surface side, or the rear side CONSTITUTION:A functional element 2 such as an integrated circuit or the like is formed on a substrate, e.g., a semiinsulating GaAs substrate 1. After that, an element region is masked with a photoresist 3; a cutting part is patterned. An insulating film by SiO2, SiN4 or the like which has been deposited when the element is formed is etched sequentially by making use of the photoresist as a mask; the surface of the substrate is exposed. In addition, the substrate 1 is etched from the surface by making use of the insulating film as a mask. Thereby, it is possible to perform dicing operation by stopping the propagation of a crack, with good controllability, at low costs and without damaging a pattern face.</p> |
