| 摘要 |
PURPOSE:To provide a resist material made of silicon nitride having strong resistance to heat and etching by irradiating a silicon nitride film on a semiconductor substrate with patterned light of a specified range of wavelength for a chemical reaction, and removing the irradiated areas by etching. CONSTITUTION:A silicon nitride film 2 is deposited on a semi-insulating GaAs substrate 1 by plasma CVD. The silicon nitride film is covered intimately with a quartz mask 3 having a line-and-space pattern and irradiated with farultraviolet light 4 of 180-200nm in the atmosphere using a lowpressure mercury lamp. The substrate is etched and washed with water. Since the silicon nitride film has strong resistance to heat and etching, an accurate pattern transfer can take place, and thus it is possible to form a fine pattern. |
