| 摘要 |
PURPOSE:To provide the high-aspect-ratio fine-pattern formation method, of an organic film, wherein the generation of the mixed layer of a photosensitive layer with the organic film is prevented or eliminated in a method wherein the organic film is dry-etched by using the photosensitive layer which has been patterned. CONSTITUTION:An organic-film layer 2 is formed on a semiconductor substrate 1; it is denatured after the surface of the organic film has been irradiated with deep ultraviolet rays. Thereby, it is possible to prevent generation of the mixed layer with a photosensitive layer 3 formed thereon. In succession, the organic film is worked fine by executing an oxygen-plasma etching operation while the photosensitive layer patterned by an exposure operation and a developing operation is used as a mask. Alternatively, the photosensitive layer is patterned; after that, a dry etching operation is executed by CF4 gas; in succession, the organic film is worked fine by executing an oxygen-plasma etching operation. Lastly, when the photosensitive layer is removed, the high-aspect-ratio pattern of the organic film is formed Thereby, the high-aspect-ratio fine pattern of the organic film can be obtained with good accuracy. |
