| 摘要 |
PURPOSE:To provide a MIS-type field effect transistor having high reliability and high current driving ability and is proper for high integration. CONSTITUTION:A source and a drain have an LDD structure, a sidewall spacer 6 is provided to an area near the sidewall of a gate electrode above a low concentration diffusion layer 2 thereof, a gate electrode bottom part protrudes and a gate electrode protruding part is buried inside a semiconductor substrate 1 in a self-alignment manner. Thereby, it is possible to bury an overlapping part of the low concentration diffusion layer 2 and a gate electrode 5 inside the silicon substrate 1 in a self-alignment manner and to realize a semiconductor device having high reliability and high current driving ability through the plane occupied area of a transistor is small. Furthermore, contact between the transistor and an upper wiring layer can be formed in a self-alignment manner and a plane occupied area of the transistor can be further reduced. |
