| 摘要 |
<p>PURPOSE: To obtain a method for fabricating a conductive tip in which the radius of the tip can be adjusted easily and controllably in the range of nm. CONSTITUTION: Mask layers 2, 3, 4 containing such a substance as a semiconductor material does not grow at the time of selective epitaxy at least on the surface thereof or directly on a substrate 1 are formed on the substrate 1 mesa of a semiconductor material. An opening 6 for exposing the surface of the substrate 1 is made in the mask layers 2, 3, 4. A conductive tip 7 is fabricated on the exposed surface of the substrate 1 by selective epitaxy where layer growth in the direction parallel with the surface of the substrate 1 is slower than that in the direction vertical to the surface of the substrate 1.</p> |
