发明名称 PROCESS FOR PULLING UP SINGLE CRYSTAL.
摘要 <p>A process for pulling single crystals of silicon by the growth of the single crystals from molten silicon in a crucible by the Czochralski process, wherein the single crystals are pulled up while sensing the data regarding various conditions which affect the pulling process and comparing them with the present values or allowances regarding these conditions. <IMAGE></p>
申请公布号 EP0536405(A1) 申请公布日期 1993.04.14
申请号 EP19920901939 申请日期 1991.12.27
申请人 MITSUBISHI MATERIALS CORPORATION;MITSUBISHI MATERIALS SILICON CORPORATION 发明人 WAKABAYASHI, D., MITSUBISHI MATER. SILICON CORP.;ANBE, T., MITSUBISHI MATER. SILICON CORPORATION;SAITOH, M., MITSUBISHI MATERIALS SILICON CORP.
分类号 C30B15/00;C30B15/14;C30B15/20 主分类号 C30B15/00
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