| 摘要 |
PURPOSE:To prevent reduction in memory retention characteristic and increase in resistance of a wiring film due to compression stress accompanied by sealing of resin and enable a risk of disconnection to be eliminated by adhering a protection plate with rigidity through a stress-relaxation film on a semiconductor element so that a void is formed at an upper part of an integrated-circuit formation region of the semiconductor element which is located at an area to the stress-relaxation film. CONSTITUTION:A stress-relaxation film 3 is formed on a surface of a semiconductor element 2 and then a void 6 is provided between the stress- relaxation film 3 and a protection plate 5 by adhering the protection plate 5 with a recessed part on a rear surface and rigidity to the stress-relaxation film 3. When resin is sealed in this state, a compression force which is applied from a resin 10 to the semiconductor element 2 is relaxed by the void 6 and the stress-relaxation film 3, thus enabling the compression force which is applied to the semiconductor element to be absorbed and preventing characteristic deterioration due to the compression stress of an internal circuit. |
