| 摘要 |
PURPOSE:To increase of the capacitance of a capacitor in a semiconductor device. CONSTITUTION:A storage electrode 3 has a lamination structure of a first conducting layer 3a and a second conducting layer 3b, which are made of, e.g. polycrystalline silicon and tungsten silicide, respectively. As the result, the etching rate of the layer 3a is different from that of the layer 3b. When ordinary isotropic etching is performed after the storage electrode 3 is patterned, a step-difference is generated on the side surface of the storage electrode 3. When a plate electrode 5 is formed on the surface after a capacitance film 4 is formed, the surface area is increased by the step-difference part, so that the capacitance of a capacitor can be increased. Thereby the high level integration in a semiconductor device can be realized. |
