| 摘要 |
PURPOSE:To provide a light emitting diode for a plastic communication fiber at a low price. CONSTITUTION:A mesa part 10 is made on a GaAs substrate by photolithography. An epitaxial layer, which constitutes junction, is grown on the substrate 8, where the mesa part 10 is made, by slide ball method. With the liquid-phase epitaxial growth method, if there is irregularity on the surface going to grow, the epitaxial layer seeks to grow into a recess. Therefore, the n-type GaAs current checking layer 7 of the first layer grows only in the section where a mesa part does not exist. Successively, the p-type GaAlAs clad layer 6 of the second layer, the p-type GaAlAs active layer of the third layer, and n-type GaAlAs clad layer of the fourth layer, the n-type GaAs contact layer 2 of the fifth layer are grown. After end of growth, an electrode 9 on p side, on the rear of a wafer, and an electrode on n side, on the surface, are formed by deposition and photolithography. |
