| 摘要 |
PURPOSE:To reduce the switching loss of the rectifier circuit or the like by using the field-effect transistor as a diode. CONSTITUTION:A longitudinal field-effect transistor is formed by one-conduction type drain region 2, plural gates 3 on the region 2, other conduction type substrate layer 4 diffused in each drain region 2, and one-conduction type source layer 5 to be used as a diode and turned on/off while the potential of the substrate layer 4 is separated from the source layer 5. The drain of the rectifier circuit is connected to a coil of an AC power supply and the source is connected to the output of the rectifier and the gate is connected to the AC power supply coil so that a potential with a polarity in response to the AC power supply voltage is applied to the gate. |
