发明名称 ELECTRON BEAM LITHOGRAPHY SYSTEM
摘要 PURPOSE:To remarkably reduce the throughput of a phase shifting pattern by storing the formulae for calculating the position of the phase shifting pattern and shape data on a parameter table and automatically generating the phase shifting pattern in accordance with a phase shifting method applying command. CONSTITUTION:An electron beam 42 emitted from an electron gun 41 irradiates a mask plate 4 after the beams 42 is controlled to a prescribed shape and current density by means of electron lenses 44 and 47 and diaphragms 43 and 46, etc. Plotting data are usually stored in an external memory 26, such as a magnetic disk, etc., and a prescribed pattern is plotted on the plate 4 by reading out the plotting data from the memory 26 by means of a computer 23 and sending the data to a pattern generator 24, deflector 48, etc. When a phase shifting pattern is plotted, the computer 23 issues a phase shifting method applying command and the data of a phase shifting pattern generating device 30 are sent to the deflector 48, a blanker control system 25, etc., in accordance with the command. The parameter of the phase shifting pattern data are set on a parameter table 29.
申请公布号 JPH0582427(A) 申请公布日期 1993.04.02
申请号 JP19910243873 申请日期 1991.09.25
申请人 HITACHI LTD 发明人 KAWASAKI KATSUHIRO;MATSUZAKA TAKASHI;OTA HIROYA;KONO TOSHIHIKO
分类号 H01L21/027;H01J37/302;H01L21/30 主分类号 H01L21/027
代理机构 代理人
主权项
地址