| 摘要 |
PURPOSE:To form a high sensitive resist pattern excellent in dry etching resistance and resolution with extreme ultraviolet radiation as a light source in a forming method of the resist pattern. CONSTITUTION:The resist composition consists of a copolymer of 2-norbornen-2- sustituent expressed by the formula with acrylic ester and photo acid generating agent. The resist pattern is formed by selectively exposing the resist applied on a substrate to be treated and by developing with alkali after baking. In the formula, X is cyano group (-CN) or chlorine group (-Cl), R is tert-butyl group, dimethyl benzyl group or tetrahydropyranyl group. |
