摘要 |
<p>PURPOSE:To provide a capacitor for a semiconductor integrated circuit, which can reduce time occupancy area and can accumulate enough quantity of signal charge, and a nonvolatile memory using this capacitor. CONSTITUTION:A first electrode 31, a first ferroelectric film 32, a second electrode 33, a second ferroelectric film 34, and a third electrode 35 are stacked in that order, and the third electrode 35 and the first electrode 31 are connected with each other by metallic wiring 36. The second electrode 33 is connected to an earth line or a drive line.</p> |