| 摘要 |
PURPOSE:To avoid soft errors of a semiconductor memory device caused by an alpha-ray and improve the reliability. CONSTITUTION:A memory cell is composed of a charge storage capacitor 1 and a transfer gate MOS transistor 2 connected to the storage electrode of the charge storage capacitor 1. A number of the memory cells are arranged to constitute a cell array. The transfer gate MOS transistor 2 is composed of a thin transistor whose source and drain are not composed of diffused layers. The storage electrode of the charge storage capacitor 1 is connected to a first electrode 12 which is to be the source or drain of the thin film transistor 2, a bit line 11 is connected to a second electrode which is to be the drain or source of the thin film transistor 2 and the gate electrode 9 of the thin film transistor 2 is connected to a word line. |
