发明名称 |
SURFACE ACOUSTIC WAVE ELEMENT |
摘要 |
PURPOSE:To decrease the insertion loss at a high frequency band by forming a piezoelectric layer with a laser abrasion method in a surface acoustic wave element formed by laminating a diamond and the piezoelectric layer. CONSTITUTION:A polycrystal diamond layer 2 is formed onto an Si substrate 1 with the microwave plasma CVD method by using H2 and CH4 as raw material gases, after the surface is polished to form 2 pairs of Al comb-type electrodes 3. A ZnO film 4 is formed from the upper part of the electrode 3 by the laser abrasion method. The ZnO film 4 has not only an excellent C axis orientation but also forms a high resistance film without Li dope with small particle diameter and excellent surface flatness different from a conventional element. The surface acoustic wave element with small surface acoustic wave propagation loss and small insertion loss is realized through the lamination structure comprising the ZnO film 4 and the polycrystal diamond layer 2. |
申请公布号 |
JPH0583067(A) |
申请公布日期 |
1993.04.02 |
申请号 |
JP19910242974 |
申请日期 |
1991.09.24 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
NAKAHATA HIDEAKI;SHIKADA SHINICHI;YAGOU AKIHIRO;FUJIMORI NAOHARU |
分类号 |
H03H3/08;H03H9/02;H03H9/145 |
主分类号 |
H03H3/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|