发明名称 NONVOLATILE SEMICONDUCTOR MEMORY SYSTEM
摘要 <p>PURPOSE:To provide an EEPROM system capable of setting the threshold of a written memory cell within a desired range by efficiently writing. CONSTITUTION:This system repeats a data write operation and a write verification operation set with a write time at unit in one page, and respective pages successively. In the data write operation, at the time of data writing in a page, a total time necessary for data writing in a previous page is set as a first data write time, then the futile repeating of the write and the verification is omitted.</p>
申请公布号 JPH0581880(A) 申请公布日期 1993.04.02
申请号 JP19910024769 申请日期 1991.02.19
申请人 TOSHIBA CORP 发明人 TANAKA TOMOHARU;OUCHI KAZUNORI;MOMOTOMI MASAKI;SUMIHARA HIDEKI;SAITO SHINJI
分类号 G11C16/02;G11C16/06;G11C29/00;G11C29/12 主分类号 G11C16/02
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