| 摘要 |
<p>A photovoltaic device (20) which is resistant to shunt and short defects developing between the opposed electrode thereof. The photovoltaic device comprises an electrically conductive substrate (22), a semiconductor (24) including a photogenerative region, a layer of transparent conductive material (26), and means (30) for collecting photogenerated current. In particular, a layer of low-conductivity material (28) is operatively positioned between the layer of transparent conductive material and the collecting means (30), thereby resistively restricting the flow of electric current through short circuit portions (36). A method of fabricating such a shunt-resistant photovoltaic device is also disclosed.</p> |
