发明名称 |
METHOD FOR PRODUCING A DMOS SEMICONDUCTOR DEVICE |
摘要 |
An improved method for the fabrication of a DMOS transistor. The method comprises forming the source region of the transistor by introducing doping from a doped, thin polycrystalline layer. A thin insulating layer is used to protect the body channel contact region from the source doping, and the thin polycrystalline layer is completely consumed and converted into an insulator by oxidation subsequent to the source doping step. |
申请公布号 |
EP0179407(B1) |
申请公布日期 |
1993.03.31 |
申请号 |
EP19850113221 |
申请日期 |
1985.10.18 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
CONTIERO, CLAUDIO |
分类号 |
H01L29/78;H01L21/225;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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