| 摘要 |
<p>Drift values of exposure position of an electron beam (6) are obtained through detection of a reference mark on a sample stage (7) and a drift characteristic formula, which expresses the exposure positions of the electron beam, is corrected by using a plurality of the drift values. The electron beam (6) is controlled to expose some lithographic pattern by estimating the exposure position in real time at which the electron beam is irradiated at the estimated exposure position based on the drift characteristic formula without detecting the reference mark, and further to expose other lithographic pattern by calculating the exposure position based on the drift characteristic formula by detecting the reference mark. The measuring of the drift, which takes much time, is performed at few limited positions and the correction of the exposure positions is effected in a short time. <IMAGE></p> |
