| 摘要 |
<p>PURPOSE:To reduce residual attraction force quickly through simple circuitry by electrically connecting a sample and an electrode, when the electrostatically attracted sample is removed from the electrode, thereby feeding a current between the sample and the electrode while bypassing an insulating film, eliminating potential difference and releasing attraction force. CONSTITUTION:Upon finish of treatment of a wafer 6, plasma is extinguished and a switch 11 is turned OFF to interrupt application of DC voltage, and then the wafer 6 is removed from a sample table 5. A switch 15 is then turned ON to feed a current through a variable resistor 14 thus removing charges stored in the insulating film 12. The wafer 6 is then pushed up by means of a wafer push up device 7. According to this method residual attraction force can be reduced in a short time through simple circuitry.</p> |
