发明名称 CONTROL SYSTEM OF NONVOLATILE MEMORY
摘要 <p>PURPOSE:To shorten the overhead time of the title system and to quickly perform an erasure/write operation of the title system by a method wherein the number of erasure/write operations in later steps is decided by a real-ability value which has been measured actually in a first step. CONSTITUTION:When a flash EEPROM is written, its operation is confirmed and its real-ability value Nw is measured actually in a first step while a data is being written actually. In a next step, only the write operation of a target data is repeated by the number of operations of the real-ability value Nw without confirming the operation; after that, the write operation is confirmed. When an error is caused, the write operation is repeated further. Thereby, it is possible to omit the execution time and the overhead time due to the repetition of a confirmation operation and to perform a quick erasure/write operation.</p>
申请公布号 JPH0574179(A) 申请公布日期 1993.03.26
申请号 JP19910231398 申请日期 1991.09.11
申请人 DIGITAL:KK 发明人 MAEKAWA TOSHIYUKI
分类号 G11C17/00;G11C16/02;G11C16/06;H01L21/8247;H01L27/115 主分类号 G11C17/00
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