| 摘要 |
PURPOSE:To provide a dielectric porcelain composition with low firing temperature, large specific inductive capacity, large no-load Q in a microwave region, and small temperature change rate, and provide a microwave electronic device the conductor of which is made of Cu, Cu alloy, or Ag alloy. CONSTITUTION:In a dielectric porcelain composition expressed by a general formula (Bi2O3)X(Nb2O5)1-X wherein (x) is in the range of 0.48<=X<=0.51, further Cu is contained as sub-component the quantity of which is in the range of 0<Cu/(Bi+Nb)<=0.01 when expressed by Cu/(Bi+Nb). A microwave electronic device uses a dielectric layer composed principally of BiNbO4 and uses Cu, Cu alloy, or Ag alloy as its conductor. |
