VERFAHREN ZUM HERSTELLEN VON KONDENSATOREN BEI CMOS- UND NMOS-VERFAHREN.

摘要

In this process for making capacitors in CMOS processes, the upper plate (22) of the capacitors is obtained through an appropriate masking step, also used, alone or together with further successive steps, for the definition of the gate regions of the transistors, and the lower plate (20) of the capacitors is defined exploiting one of the masks (30', 30'') used for the definition of the upper plate or of the source-drain regions of the complementary transistors, allowing thereby the manufacture of capacitors with few masking steps.