| 摘要 |
A circuit for testing a memory device includes a data writing circuit, a data checking circuit, and a control circuit. A method for writing data in testing the memory device comprises the steps of generating a voltage difference between a pair of bit lines B/L and &upbar& B/L, and storing directly data corresponding to the voltage difference in a capacitor of a memory cell. Direct writing of data on the bit lines is performed. Moreover, each memory cell is totally checked during one cycle, and the test time is greatly reduced.
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