COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR AND ONE-CAPACITOR DYNAMIC-RANDOM-ACCESS MEMORY CELL AND FABRICATION PROCESS THEREFOR

摘要

YO987-103 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR AND ONE-CAPACITOR DYNAMIC-RANDOM-ACCESS MEMORY CELL AND FABRICATION PROCESS THEREFOR A complementary MOS one-capacitor dynamic RAM cell which operates with a non-boosted wordline without a threshold loss problem and which includes one storage capacitor and n- and p-type transfer devices connected to the storage capacitor which function as two complementary transistor devices having gates controlled by complementary signals on the RAM wordlines.